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SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

• Multi-Epi process SJ-FET
• Fast-Recovery body diode
• Extremely Low Reverse Recovery Charge
• 700V @TJ = 150 ℃
• Typ. RDS(on) = 0.105Ω
• Ultra Low Gate Charge (typ. Qg = 57nC)
• 100% avalanche tested