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SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy.
SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency.

SSP07N60S/SSF07N60S/SST07N60S/SSU07N60S
Features:
• Multi-Epi process SJ-FET
• 650V @TJ = 150 ℃
• Typ. RDS(on) = 0.58Ω
• Ultra Low Gate Charge (typ. Qg = 12.5nC)
• 100% avalanche tested
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